Next generation photovoltaic material going beyond the Shockley–Queisser limit of 33.16%:
GaNGeC, Two-dimensional heterojuction semiconductor
•Significantly higher absorption coefficient in the visible spectrum.
•Doesn’t need open circuit, which cause a meaningfully loss of energy
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We are in the process of further improvement in this area and invented a new material X, which has even better properties including:
•Semi-metal material
•Even better absorption rate than GaNGeC